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-40%
BC547-B166 NPN Transistor 50V/ 0.3A
Original price was: ₨15.00.₨9.00Current price is: ₨9.00. Quick ViewOverall, the BC547 NPN transistor is a versatile and reliable transistor that is suitable for a wide range of applications. NPN Transistor BC547 is a popular choice for electronic hobbyists and engineers because it is inexpensive and easy to use. here are the specifications of the BC547-B166 NPN transistor:
- Collector current (maximum): 300mA
- Collector-emitter voltage (maximum): 65V
- Base current (maximum): 5mA
- Current gain (hFE): 110 to 800
- Package: TO-92
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LCR T4 Transistor Tester ESR Meter
Original price was: ₨2,000.00.₨1,599.00Current price is: ₨1,599.00. Quick ViewSpecifications:
Material: Printed circuit board
Power Mode: 6F22
Display: 128 * 64 LCD backlight
Testing Speed: 2 seconds (1 minute is normal for large capacitor)
Shutdown Current: 20nA
Displayed Value: 25pf-100mF (resolution 1pF)
Inductance: 0.01mH-20H
Resistance: 2100
Power Volatge: 9V layer-built battery / 2 li-ion batteries to form a 8.4V battery pack
Resolution of Resistance Measurement: 0.1 ohms
The Highest Measured Value: 50M ohms
Provided Testing Current: Approx. 6mA
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A heat-sink is designed to remove heat from a transistor and dissipate it into the surrounding air as efficiently as possible. Heat-sinks take many different forms, such as finned aluminium or copper sheets or blocks, often painted or anodised matt black to help dissipate heat more quickly. Good physical contact between the transistor and heat-sink is essential, and a heat transmitting grease (heat-sink compound) is smeared on the contact area before clamping the transistor to the heat-sink.
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This NPN Bipolar Darlington Transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers.
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BC327 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.
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The main use is for audio frequency amplifier applications. It can also be used for the switching purpose just like other PNP transistors. When use as an Audio frequency general purpose amplifier, can be operated in the active region. This transistor is further divided into four groups according to the DC current gain, O, Y, G, and L and has 140, 240, 400 and 700 hfe DC current gain respectively.
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The 2N2905 from Multicomp Pro is a through-hole, silicon planar PNP low power bipolar transistors in a TO-39 metal can package. These are general-purpose transistors suitable for switching applications.
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2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.
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2N4401 is an NPN bipolar junction transistor that is mainly designed for general purpose, small signal, and switching applications.
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- Type Designator: 2SA1013
- Material of transistor: Si
- Polarity: PNP
- Maximum collector power dissipation (Pc), W: 0.9
- Maximum collector-base voltage Ucb, V: 160
- Maximum collector-emitter voltage Uce, V: 160
- Maximum emitter-base voltage Ueb, V: 6
- Maximum collector current Ic max, A: 2
- Maksimalna temperatura (Tj), °C: 125
- Transition frequency (ft), MHz: 15
- Collector capacitance (Cc), pF: 35
- Forward current transfer ratio (hFE), min: 60
- Noise Figure, dB: –
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-15%
- Small Signal NPN Transistor
- Current Gain (hFE), typically 50 for small signal
- Continuous Collector current (IC) is 800mA
- Collector-Emitter voltage (VCEO) is 50 V
- Collector-Base voltage (VCB0) is 75V
- Emitter Base Voltage (VBE0) is 6V
- Turn on time is 40ns
- Turn off time is 250ns
- Available in To-92 Package
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- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Base- Emitter Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Collector-Base Voltage (VCB) is 60V
- Available in To-92 Package
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- Bi-Polar PNP Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Collector Emitter Voltage (VCE) is 40V
- Collector Base Voltage (VCB) is 40V
- Available in To-92 Package
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2N5401 Features and Electrical Characteristics
- Available in Pb Free package
- High collector breakdown voltage
- With DC Current Gain (hFE) up to 100
- Maximum voltage across collector and emitter: 150V
- Maximum current allowed trough collector: 600mA
- Maximum voltage across collector and base: 160 V
- Maximum voltage across base and emitter: 5V
- Operating temperature range: -55C to +150C
- Maximum power dissipation: 0.62 W
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Features and Technical Specification
- Having a high value of current (max. 600 mA)
- Low voltage value (max. 40 V)
- It comes in different types of packages TO-92, TO-18
- These are Lead (Pb) free devices
- Collector to Emitter voltage (VCEO) is 40v (max.)
- Collector to Base voltage (VCBO) is 60v (max.)
- Emitter to Base voltage(VEBO) is 5v (normally)
- The maximum value of Collector current is 600mA
- Power dissipation at ambient temperature is about 400mW
- Having DC current gain (hfe) of 100 to 300 (max.)
- The temperature of operation and storage is -65 to +150 C
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- Type –NPN
- Collector-Emitter Voltage: 400V
- Collector-Base Voltage: 450V
- Emitter-Base Voltage: 7V
- Collector Current: 10A
- Collector Dissipation – 80W
- DC Current Gain (hfe) – 10
- Operating and Storage Junction Temperature Range -55 to +150C
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- Type –NPN
- Collector-Emitter Voltage: 60V
- Collector-Base Voltage: 60V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Collector Dissipation – 30W
- DC Current Gain (hfe) –40 to 320
- Transition Frequency – 5 MHz
- Operating and Storage Junction Temperature Range -55 to +150C
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- Darlington medium-power NPN Transistor
- High DC Current Gain (hFE), typically 1000
- Continuous Collector current (IC) is 5A
- Collector-Emitter voltage (VCE) is 100 V
- Collector-Base voltage (VCB) is 100V
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 120mA
- Type NPN
- Collector-Emitter Voltage: 100V
- Collector-Base Voltage: 100V
- Emitter-Base Voltage: 5V
- Collector Current: 5A
- Collector Dissipation: 65W
- DC Current Gain (hfe): 1000
- Operating and Storage Junction Temperature Range: -65 to +150C
- Package: TO-220
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TIP122 transistor designed for general purpose amplifier and low speed switching applications.
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-25%
2SD1047 Bipolar NPN type Transistor.
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The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.
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- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
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- Drain Current ID= 9.2A@ TC=25
- Drain Source Voltage : VDSS= 650V(Min)
- Static Drain-Source On-Resistance: RDS(on) = 0.83(Max)
- Avalanche Energy Specified
- Fast Switching
- Simple Drive Requirements
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- 8N60 N-Channel Power Mosfet Transistor
- Ultra low gate charge ( typical 28 nC )
- Low reverse transfer capacitance ( Crss= typical 12.0 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- Drain Current: ID= 7.5A at TC= 25
- Drain Source Voltage: VDSS= 600V
- Static Drain-Source On-Resistance: RDS(on)< 1.2
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20N60 belongs to the family of N-channel MOSFET. Its basically a power MOSFET that means it can handle certain levels of power. Its working principle is based on UTC technology. It provides the fast switching application and the minimum on state resistance as well. handling of high current, high speed of switching and low on sate resistance are its major features. Its real life applications include servo motor drivers, UPS, speed control of AC motor and many more.
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Out Of Stock- Package Type: TO-220
- Transistor Type: N Channel
- Max Voltage Applied From Drain to Source: 55V
- Max Gate to Source Voltage Should Be: 20V
- Max Continues Drain Current is : 49A
- Max Pulsed Drain Current is: 160A
- Max Power Dissipation is: 94W
- Minimum Voltage Required to Conduct: 2V to 4V
- Max Storage & Operating temperature Should Be: -55 to +170 Centigrade
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- Plastic casing NPN Transistor
- Continuous Collector current (IC) is 1.5A
- Collector-Emitter voltage (VCE) is 80 V
- Collector-Base voltage (VCB) is 80V
- Base Current (Ib) is 0.5A
- Emitter Base Breakdown Voltage (VBE) is 5V
- DC current gain (hfe) is 40 to 160
- Available in To-225 package
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C1383 is a Bipolar NPN type transistor which is used for low-frequency power amplification and driver amplification.
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Out Of Stock- Type Designator: 2SC2331
- Material of transistor: Si
- Polarity: NPN
- Maximum collector power dissipation (Pc), W: 1
- Maximum collector-base voltage |Ucb|, V: 80
- Maximum collector-emitter voltage |Uce|, V: 60
- Maximum emitter-base voltage |Ueb|, V: 8
- Maximum collector current |Ic max|, A: 0.7
- Transition frequency (ft), MHz: 30
- Collector capacitance (Cc), pF: 8
- Forward current transfer ratio (hFE), min: 40
- Noise Figure, dB: –
- Package of 2SC2331 transistor: TO92
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-14%
- Type: NPN
- Collector-Emitter Voltage, max: 140 V
- Collector-Base Voltage, max: 140 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 100 W
- DC Current Gain (hfe): 55 to 160
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
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- Type – NPN
- Collector-Emitter Voltage: 25 V
- Collector-Base Voltage: 30 V
- Emitter-Base Voltage: 7 V
- Collector Current: 0.05 A
- Collector Dissipation – 0.4 W
- DC Current Gain (hfe) – 130 to 520
- Transition Frequency – 220 MHz
- Noise Figure – 6 dB
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-92
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- 2sc925 well known as C945 NPN transistor.
- Max Voltage Collector Emmiter=50 V.
- Max Collector current=150 mA.
- Collector power dissipation: 400 mW.
- Japanese High-frequency amplifier NPN Transistor.
- Current Gain (hFE) is 70 to 700 (high linearity).
- Continuous Collector current (IC) is 150mA.
- Collector-Emitter voltage (VCEO) is 50 V.
- Collector-Base voltage (VCB0) is 60V.
- Emitter Base Voltage (VBE0) is 5V.
- Transition Frequency is 150MHz.
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- Bi-Polar PNP Transistor
- Continuous Collector current (IC) is -1.5A
- Collector-Emitter voltage (VCE) is- 80 V
- Collector-Base voltage (VCB) is- 80V
- Base Current (Ib) is -0.5A
- Emitter Base Breakdown Voltage (VBE) is -5V
- DC current gain (hfe) is 40 to 160
- Available in To-225 and SOT-32 Package
- Collector Dissipation: 12.5 W
- Operating Junction Temperature Max (Tj): 150°C
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2SA1941 bipolar transistor p-n-p type transistor. Collector-Emitter Voltage: -140 V Collector-Base Voltage: -140 V Emitter-Base Voltage: -5 V Collector Current: -10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C
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-26%
Goot KX-60R Electrical Soldering Iron 60W
Original price was: ₨1,150.00.₨849.00Current price is: ₨849.00. Quick View- Power Output: 60 watts
- Voltage: Designed for standard electrical outlets (AC power)
- Temperature Range: Typically ranges from 250°C to 500°C (482°F to 932°F)
- Heating Element: High-quality heating element for rapid heating and efficient soldering
- Heat Recovery Time: Fast heat recovery for minimal downtime between soldering joints
- Tip Compatibility: Compatible with a variety of soldering iron tips for different soldering tasks and applications
- Construction: Durable construction for long-lasting performance and reliability
- Ergonomics: Ergonomic design for comfortable grip and reduced hand fatigue during extended use
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-6%
BMS 4S 20A Protection Board 18650 Li-ion Lithium Battery
Original price was: ₨510.00.₨479.00Current price is: ₨479.00. Quick ViewBMS 4S 20A Protection Board 18650 Li-ion Lithium Battery is an electronic regulator that monitors and controls the charging and discharging of rechargeable batteries. Battery BMS protection boards are the brains behind battery packs. BMS 4S 20A Protection Board 18650 Li-ion Lithium Battery manages the output, charging, and discharging and also provides critical safeguards to protect the batteries from damage. 18650 protection circuit Board is a high-accuracy voltage detection circuit. The 20A protection board can be used for lithium-ion Phosphate batteries, Low power inverters, massager battery packs, electronics, LED light backup power supplies, solar street lights battery packs, and many other products
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-16%
Camelion D type Heavy Duty 1.5V D size Battery – 2 Pack
Original price was: ₨500.00.₨419.00Current price is: ₨419.00. Quick View- Voltage: 1.5V
- Chemistry: Zinc-Chloride
- Height: 2.42in (61.5mm)
- Diameter: 1.03in (34.2mm)
- Weight: 0.21lbs
- Type: D
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-26%
RPM Measurement Sensor Rotational Speed Measuring Module
Original price was: ₨160.00.₨119.00Current price is: ₨119.00. Quick View- Input voltage: 3.3V to 5V
- Output signal: TTL signal, active low
- Pulse frequency range: 0 to 100Hz
- RPM range: 0 to 6000RPM
- Dimensions: 32 x 14 x 7mm
- Weight: 5g
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This Power MOSFET provides the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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The 4N25 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a photo-transistor.
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This device is designed for use where the output voltage is a product of an input voltage (signal) and a switching function (carrier). Typical applications include suppressed carrier and amplitude modulation, synchronous detection, FM detection, phase detection, and chopper applications.
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MOSFET (metal-oxide-semiconductor field-effect transistor, pronounced MAWS-feet) is a special type of field-effect transistor (FET) that works by electronically varying the width of a channel along which charge carriers (electrons or holes) flow. The wider the channel, the better the device conducts. The charge carriers enter the channel at the source and exit via the drain. The width of the channel is controlled by the voltage on an electrode called the gate, which is located physically between the source and the drain and is insulated from the channel by an extremely thin layer of metal oxide.
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The Exclusive OR gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N-Channel and P-Channel enhancement mode transistors. All inputs are protected against static discharge with diodes to VDD and VSS.
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-20%
QTR-8A Reflectance Sensor Array
Original price was: ₨999.00.₨799.00Current price is: ₨799.00. Quick ViewThis sensor module has 8 IR LED/phototransistor pairs mounted, making it a great detector for a line-following robot. Pairs of LEDs are arranged in series to halve current consumption, and a MOSFET allows the LEDs to be turned off for additional sensing or power-savings options. Each sensor provides a separate analog voltage output.
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Out Of StockThis analog multimeter has a capability of measuring DC voltages having four range setting, DC current having three range setting, AC voltages having four range setting and resistance having three range setting.
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-18%
UNI-T UT33A+ Palm Size Multimeter
Original price was: ₨4,250.00.₨3,499.00Current price is: ₨3,499.00. Quick ViewSpecification
- Brand Name:UNI-T
- Model Number:UT33A
- DIY Supplies:Electrical
- Measuring Current Range:400mA/4mA/40mA/400mA/10A
- Operating Temperature:0 – 50
- Measuring Voltage Range:400mV/4V/40V/400V/500V
- Display Type:Digital Display
- Dimensions:13 x 7.5 x 2.5cm
- Measuring Capacitance Range:–
- Measuring Resistance Range:400/4k/40k/400k/4M/40MOhm
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Specifications:
- Power (Watts) 1W
- Resistant 22K OHMS
- Tolerance +- 5%
- Resistor Type Carbon Film
- Lead Free
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The CD4050 hex buffers are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-channel enhancement mode transistors. These devices feature logic level conversion using only one supply voltage (VDD). The input signal high level (VIH) can exceed the VDD supply voltage when these devices are used for logic level conversions. These devices are intended for use as hex buffers, CMOS to DTL/ TTL converters, or as CMOS current drivers, and at VDD = 5.0V, they can drive directly two DTL/TTL loads over the full operating temperature range.