A heat-sink is designed to remove heat from a transistor and dissipate it into the surrounding air as efficiently as possible. Heat-sinks take many different forms, such as finned aluminium or copper sheets or blocks, often painted or anodised matt black to help dissipate heat more quickly. Good physical contact between the transistor and heat-sink is essential, and a heat transmitting grease (heat-sink compound) is smeared on the contact area before clamping the transistor to the heat-sink.

This NPN Bipolar Darlington Transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers.

BC327 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.

2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.

2N4401 is an NPN bipolar junction transistor that is mainly designed for general purpose, small signal, and switching applications.

2N5401 Features and Electrical Characteristics

• Available in Pb Free package
• High collector breakdown voltage
• With DC Current Gain (hFE) up to 100
• Maximum voltage across collector and emitter: 150V
• Maximum current allowed trough collector: 600mA
• Maximum voltage across collector and base: 160 V
• Maximum voltage across base and emitter: 5V
• Operating temperature range: -55C to +150C
• Maximum power dissipation: 0.62 W

Features and Technical Specification

• Having a high value of current (max. 600 mA)
• Low voltage value (max. 40 V)
• It comes in different types of packages  TO-92, TO-18
• These are Lead (Pb) free devices
• Collector to Emitter voltage (VCEO) is 40v (max.)
• Collector to Base voltage (VCBO) is 60v (max.)
• Emitter to Base voltage(VEBO) is 5v (normally)
• The maximum value of Collector current is 600mA
• Power dissipation at ambient temperature is about 400mW
• Having DC current gain (hfe) of 100 to 300 (max.)
• The temperature of operation and storage is -65 to +150 C

• Type –NPN
• Collector-Emitter Voltage: 60V
• Collector-Base Voltage: 60V
• Emitter-Base Voltage: 5V
• Collector Current: 3A
• Collector Dissipation – 30W
• DC Current Gain (hfe) –40 to 320
• Transition Frequency – 5 MHz
• Operating and Storage Junction Temperature Range -55 to +150C

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle

• Drain Current ID= 9.2A@ TC=25
• Drain Source Voltage : VDSS= 650V(Min)
• Static Drain-Source On-Resistance: RDS(on) = 0.83(Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements

• Plastic casing NPN Transistor
• Continuous Collector current (IC) is 1.5A
• Collector-Emitter voltage (VCE) is 80 V
• Collector-Base voltage (VCB) is 80V
• Base Current (Ib) is 0.5A
• Emitter Base Breakdown Voltage (VBE) is 5V
• DC current gain (hfe) is 40 to 160
• Available in To-225 package

C1383 is a Bipolar NPN type transistor which is used for low-frequency power amplification and driver amplification.

• 2sc925 well known as C945 NPN transistor.
• Max Voltage Collector Emmiter=50 V.
• Max Collector current=150 mA.
• Collector power dissipation: 400 mW.
• Japanese High-frequency amplifier NPN Transistor.
• Current Gain (hFE) is 70 to 700 (high linearity).
• Continuous Collector current (IC) is 150mA.
• Collector-Emitter voltage (VCEO) is 50 V.
• Collector-Base voltage (VCB0) is 60V.
• Emitter Base Voltage (VBE0) is 5V.
• Transition Frequency is 150MHz.

• Bi-Polar PNP Transistor
• Continuous Collector current (IC) is -1.5A
• Collector-Emitter voltage (VCE) is- 80 V
• Collector-Base voltage (VCB) is- 80V
• Base Current (Ib) is -0.5A
• Emitter Base Breakdown Voltage (VBE) is -5V
• DC current gain (hfe) is 40 to 160
• Available in To-225 and SOT-32 Package
• Collector Dissipation: 12.5 W
• Operating Junction Temperature Max (Tj): 150°C

This Power MOSFET provides the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.