8N60 N-Channel Power Mosfet Transistor

SPECIFICATIONS:

• 8N60 N-Channel Power Mosfet Transistor
• Ultra low gate charge ( typical 28 nC )
• Low reverse transfer capacitance ( C_rss= typical 12.0 pF )
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness
• Drain Current: I_D= 7.5A at T_C= 25
• Drain Source Voltage: V_DSS= 600V
• Static Drain-Source On-Resistance: R_DS(on)< 1.2