BD140 General Purpose PNP Epitaxial Silicon Transistor

40.00
  • Bi-Polar PNP Transistor
  • Continuous Collector current (IC) is -1.5A
  • Collector-Emitter voltage (VCE) is- 80 V
  • Collector-Base voltage (VCB) is- 80V
  • Base Current (Ib) is -0.5A
  • Emitter Base Breakdown Voltage (VBE) is -5V
  • DC current gain (hfe) is 40 to 160
  • Available in To-225 and SOT-32 Package
  • Collector Dissipation: 12.5 W
  • Operating Junction Temperature Max (Tj): 150°C

The BD140 is a PNP Epitaxial Planar Transistor that is mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN complement is BD139 and this transistor comes with a VCE of -80V and a continuous collector current of -1.5A. It can be used as a small signal switching transistor. Moreover, it has a low base voltage of -5V.

BD140 Pinout Configuration

Pin Number

Pin Name

Pin Description

1

Emitter

Current Drains out through emitter, normally connected to ground

2

Collector

Current flows in through collector, normally connected to load

3

Base

Controls the biasing of the transistor, used to turn ON or OFF the transistor.

Features and Specifications

  • Bi-Polar PNP Transistor
  • Continuous Collector current (IC) is -1.5A
  • Collector-Emitter voltage (VCE) is- 80 V
  • Collector-Base voltage (VCB) is- 80V
  • Base Current (Ib) is -0.5A
  • Emitter Base Breakdown Voltage (VBE) is -5V
  • DC current gain (hfe) is 40 to 160
  • Available in To-225 and SOT-32 Package
  • Collector Dissipation: 12.5 W
  • Operating Junction Temperature Max (Tj): 150°C

Reviews

There are no reviews yet.

Be the first to review “BD140 General Purpose PNP Epitaxial Silicon Transistor”

Your email address will not be published. Required fields are marked *