2SD313 package
The medium-power 2SD313 transistor has a TO-220 package, it is used for higher-level applications.
TO-220 package is made of epoxy/plastic material for higher temperature capacity and compactness.
TO-220 is a bulkier through-hole package, so we can easily attach a heat sink with it for an excessive heat transferring method.
2SD313 transistor electrical specification & application description
Here in this section, we describe the electrical specifications of the 2SD313 transistor, this is very useful for a better understanding of the transistor, and this information is also useful for the replacement process.
Voltage specs
The voltage specs of the 2SD313 transistor are a collector-to-emitter voltage is 60V, a collector-to-base voltage is 60V, and an emitter-to-base voltage is 5V, the voltage specifications show that it is an amplification and switching circuit.
The collector-to-emitter saturation voltage value of the 2SD313 transistor is 1V, it is the switching voltage of the device.
Current specs
The collector current value of the 2SD313 transistor is 3A, it is the maximum load capacity of this device.
The pulsed collector current value of the 2SD313 transistor is 8A, it is the maximum current at pulsed condition.
The base current value of the 2SD313 transistor is 1A, it is the maximum switching current value of the device.
Dissipation specs
The dissipation value of the 2SD313 transistor is 30W, this value is mainly dependent on the device package.
DC current gain specs
The DC current gain value of the 2SD313 transistor is 40 to 320Hfe, this value is used for amplification circuit applications.
Transition frequency
The transition frequency value of the 2SD313 transistor is 5MHz, this value is applicable at the circuit level.
Maximum temperature value
The maximum temperature is a combination of junction temperature and storage temperature, the temperature value is between -55 to +150℃.
Thermal resistance
The thermal resistance value of the 2SD313 transistor is 4.16℃/W.
2SD313 Bipolar Transistor
- Type –NPN
- Collector-Emitter Voltage: 60V
- Collector-Base Voltage: 60V
- Emitter-Base Voltage: 5V
- Collector Current: 3A
- Collector Dissipation – 30W
- DC Current Gain (hfe) –40 to 320
- Transition Frequency – 5 MHz
- Operating and Storage Junction Temperature Range -55 to +150C
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