TIP122 – Darlington Transistor (Original)

99.00
  • Darlington medium-power NPN Transistor
  • High DC Current Gain (hFE), typically 1000
  • Continuous Collector current (IC) is 5A
  • Collector-Emitter voltage (VCE) is 100 V
  • Collector-Base voltage (VCB) is 100V
  • Emitter Base Voltage (VBE) is 5V
  • Base Current(IB) is 120mA
  • Type NPN
  • Collector-Emitter Voltage: 100V
  • Collector-Base Voltage: 100V
  • Emitter-Base Voltage: 5V
  • Collector Current: 5A
  • Collector Dissipation: 65W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150C
  • Package: TO-220

TIP122 Darlington Transistor NPN

The TIP122 is a silicon NPN Darlington transistor in a TO220 type package designed for general
purpose amplifier and low speed switching applications. It functions like a normal NPN transistor, but since it has a Darlington pair inside it has a good collector current rating of about 5A and a gain of about 1000. It can also withstand about 100V across its collector- Emitter hence can be used to drive heavy loads

Features:

  • Darlington medium-power NPN Transistor
  • High DC Current Gain (hFE), typically 1000
  • Continuous Collector current (IC) is 5A
  • Collector-Emitter voltage (VCE) is 100 V
  • Collector-Base voltage (VCB) is 100V
  • Emitter Base Voltage (VBE) is 5V
  • Base Current(IB) is 120mA
  • Type NPN
  • Collector-Emitter Voltage: 100V
  • Collector-Base Voltage: 100V
  • Emitter-Base Voltage: 5V
  • Collector Current: 5A
  • Collector Dissipation: 65W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150C
  • Package: TO-220

Reviews

There are no reviews yet.

Be the first to review “TIP122 – Darlington Transistor (Original)”

Your email address will not be published. Required fields are marked *