Brief Description on 2N2219 Transistor
2N2219 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2219 has a gain value hfe of 50; this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA by using a transistor to the base pin.
When this transistor is fully biased then it can allow a maximum of 800mA to flow across the collector and emitter. This stage is called Saturation Region. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 600 mV.
Features
- Small Signal NPN Transistor
- Current Gain (hFE), typically 50 for small signal
- Continuous Collector current (IC) is 800mA
- Collector-Emitter voltage (VCEO) is 50 V
- Collector-Base voltage (VCB0) is 75V
- Emitter Base Voltage (VBE0) is 6V
- Turn on time is 40ns
- Turn off time is 250ns
- Available in To-92 Package
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