20N60 belongs to the family of N-channel MOSFET. Its basically a power MOSFET that means it can handle certain levels of power. Its working principle is based on UTC technology. It provides the fast switching application and the minimum on state resistance as well. handling of high current, high speed of switching and low on sate resistance are its major features. Its real life applications include servo motor drivers, UPS, speed control of AC motor and many more.

The 2N2905 from Multicomp Pro is a through-hole, silicon planar PNP low power bipolar transistors in a TO-39 metal can package. These are general-purpose transistors suitable for switching applications.

Features and Technical Specification

• Having a high value of current (max. 600 mA)
• Low voltage value (max. 40 V)
• It comes in different types of packages  TO-92, TO-18
• These are Lead (Pb) free devices
• Collector to Emitter voltage (VCEO) is 40v (max.)
• Collector to Base voltage (VCBO) is 60v (max.)
• Emitter to Base voltage(VEBO) is 5v (normally)
• The maximum value of Collector current is 600mA
• Power dissipation at ambient temperature is about 400mW
• Having DC current gain (hfe) of 100 to 300 (max.)
• The temperature of operation and storage is -65 to +150 C

2N4401 is an NPN bipolar junction transistor that is mainly designed for general purpose, small signal, and switching applications.

2N5401 Features and Electrical Characteristics

• Available in Pb Free package
• High collector breakdown voltage
• With DC Current Gain (hFE) up to 100
• Maximum voltage across collector and emitter: 150V
• Maximum current allowed trough collector: 600mA
• Maximum voltage across collector and base: 160 V
• Maximum voltage across base and emitter: 5V
• Operating temperature range: -55C to +150C
• Maximum power dissipation: 0.62 W

2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.

• Type – NPN
• Collector-Emitter Voltage: 25 V
• Collector-Base Voltage: 30 V
• Emitter-Base Voltage: 7 V
• Collector Current: 0.05 A
• Collector Dissipation – 0.4 W
• DC Current Gain (hfe) – 130 to 520
• Transition Frequency – 220 MHz
• Noise Figure – 6 dB
• Operating and Storage Junction Temperature Range -55 to +150 °C
• Package – TO-92

• 8N60 N-Channel Power Mosfet Transistor
• Ultra low gate charge ( typical 28 nC )
• Low reverse transfer capacitance ( Crss= typical 12.0 pF )
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness
• Drain Current: ID= 7.5A at TC= 25
• Drain Source Voltage: VDSS= 600V
• Static Drain-Source On-Resistance: RDS(on)< 1.2

9N90 is a N-Channel enhancement mode power mosfet.

The main use is for audio frequency amplifier applications. It can also be used for the switching purpose just like other PNP transistors. When use as an Audio frequency general purpose amplifier, can be operated in the active region. This transistor is further divided into four groups according to the DC current gain, O, Y, G, and L and has 140, 240, 400 and 700 hfe DC current gain respectively.

• Small Signal NPN Transistor
• Current Gain (hFE): 450 (maximum)
• Continuous Collector current (IC) is 100mA
• Collector-Emitter voltage (VCEO) is 45V
• Collector-Base voltage (VCB0) is 50V
• Emitter Base Voltage (VBE0) is 6V
• Available in To-18 Metal can Package

BC134 is a NPN type transistor. Its Maximum Collector-Base Voltage |Vcb|: 45 V & Maximum Collector Current |Ic max|: 0.2 A.

BC327 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.

This is the BC337, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The BC337 is specifically rated at 50V and 800mA max.

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) is 800 maximum
• Continuous Collector current (IC) is 500mA
• Emitter Base Voltage (VBE) is 5V
• Base Current(IB) is 5mA maximum
• Available in To-92 Package

• Bi-Polar PNP Transistor
• Continuous Collector current (IC) is -1.5A
• Collector-Emitter voltage (VCE) is- 80 V
• Collector-Base voltage (VCB) is- 80V
• Base Current (Ib) is -0.5A
• Emitter Base Breakdown Voltage (VBE) is -5V
• DC current gain (hfe) is 40 to 160
• Available in To-225 and SOT-32 Package
• Collector Dissipation: 12.5 W
• Operating Junction Temperature Max (Tj): 150°C

• HF applications in radio and television receivers
• FM tuners
• Low noise AM mixer-oscillators
• IF amplifiers in AM/FM receivers

• Package Type: TO-92
• Transistor Type: NPN
• Max Collector Current(IC): 30mA
• Max Collector-Emitter Voltage (VCE): 20V
• Max Collector-Base Voltage (VCB): 30V
• Max Emitter-Base Voltage (VBE): 5V
• Max Collector Dissipation (Pc): 300 Milliwatt
• Max Transition Frequency (fT): 120 MHz
• Minimum & Maximum DC Current Gain (hFE): 35 to 125
• Max Storage, Operating & Junction temperature range: -65 to +150 Centigrade

• 2sc925 well known as C945 NPN transistor.
• Max Voltage Collector Emmiter=50 V.
• Max Collector current=150 mA.
• Collector power dissipation: 400 mW.
• Japanese High-frequency amplifier NPN Transistor.
• Current Gain (hFE) is 70 to 700 (high linearity).
• Continuous Collector current (IC) is 150mA.
• Collector-Emitter voltage (VCEO) is 50 V.
• Collector-Base voltage (VCB0) is 60V.
• Emitter Base Voltage (VBE0) is 5V.
• Transition Frequency is 150MHz.

IRF4905 MOSFET is a P-Channel HEXFET Power MOSFET available in a TO-220AB package and is based on Advanced Process Technology. It is mainly used for fast switching purpose, capable of providing ultra-low on-resistance. This tiny device comes with three terminals called gate, drain and source where the gate terminal is used to control the current on remaining two terminals. The area between source and drain is known as a channel that is widely dependent on the voltage applied to the gate terminal.

• Fast Switching Applications
• Uninterruptible Power Supplies
• Battery Chargers
• Battery Management Systems
• Solar Battery Chargers
• Solar Uninterruptible Power Supplies
• Motor Driver Applications
• Telecommunication Applications
• Computer Related Applications

N-Channel Power MOSFET provide the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

This Power MOSFET provides the circuit designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• N-Channel Power MOSFET
• Continuous Drain Current (ID): 8A
• Gate threshold voltage (VGS-th) is 10V (limit = 20V)
• Drain to Source Breakdown Voltage: 500V
• Drain Source Resistance (RDS) is 0.85 Ohms
• Rise time and fall time is 23nS and 20nS
• Available in To-220 package

TIP122 transistor designed for general purpose amplifier and low speed switching applications.

• Darlington medium-power NPN Transistor
• High DC Current Gain (hFE), typically 1000
• Continuous Collector current (IC) is 5A
• Collector-Emitter voltage (VCE) is 100 V
• Collector-Base voltage (VCB) is 100V
• Emitter Base Voltage (VBE) is 5V
• Base Current(IB) is 120mA
• Type NPN
• Collector-Emitter Voltage: 100V
• Collector-Base Voltage: 100V
• Emitter-Base Voltage: 5V
• Collector Current: 5A
• Collector Dissipation: 65W
• DC Current Gain (hfe): 1000
• Operating and Storage Junction Temperature Range: -65 to +150C
• Package: TO-220

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle