20N60 belongs to the family of N-channel MOSFET. Its basically a power MOSFET that means it can handle certain levels of power. Its working principle is based on UTC technology. It provides the fast switching application and the minimum on state resistance as well. handling of high current, high speed of switching and low on sate resistance are its major features. Its real life applications include servo motor drivers, UPS, speed control of AC motor and many more.

• Bi-Polar NPN Transistor
• DC Current Gain (hFE) is 900 maximum
• Continuous Collector current (IC) is 200mA
• Emitter Base Voltage (VBE) is 5V
• Base Current(IB) is 10mA maximum
• Available in TO-18 Metal Can Package
• Maximum Collector-Base Voltage |Vcb|: 30 V’
• Collector Dissipation: 0.3 W
• Transition Frequency:150 MHz
• Operating Junction Temperature Max (Tj): 175 °C
• Noise Figure – 2 dB
• Operating and Storage Junction Temperature Range -65 to +175 °C
• Collector Capacitance 5pF

• Drain Current ID= 9.2A@ TC=25
• Drain Source Voltage : VDSS= 650V(Min)
• Static Drain-Source On-Resistance: RDS(on) = 0.83(Max)
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements

The 2N2905 from Multicomp Pro is a through-hole, silicon planar PNP low power bipolar transistors in a TO-39 metal can package. These are general-purpose transistors suitable for switching applications.

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements

• Type –NPN
• Collector-Emitter Voltage: 60V
• Collector-Base Voltage: 60V
• Emitter-Base Voltage: 5V
• Collector Current: 3A
• Collector Dissipation – 30W
• DC Current Gain (hfe) –40 to 320
• Transition Frequency – 5 MHz
• Operating and Storage Junction Temperature Range -55 to +150C

C1383 is a Bipolar NPN type transistor which is used for low-frequency power amplification and driver amplification.

• N-Channel Power MOSFET
• Continuous Drain Current (ID): 10A
• Gate threshold voltage (VGS-th) is 10V (limit = 20V)
• Drain to Source Breakdown Voltage: 400V
• Drain Source Resistance (RDS) is 0.55 Ohms
• Rise time and fall time is 27nS and 24nS
• Available in To-220 package

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle

• Fast Switching Applications
• Uninterruptible Power Supplies
• Battery Chargers
• Battery Management Systems
• Solar Battery Chargers
• Solar Uninterruptible Power Supplies
• Motor Driver Applications
• Telecommunication Applications
• Computer Related Applications

• Package Type: TO-220
• Transistor Type: N Channel
• Max Voltage Applied From Drain to Source: 55V
• Max Gate to Source Voltage Should Be: 20V
• Max Continues Drain Current is : 49A
• Max Pulsed Drain Current is: 160A
• Max Power Dissipation is: 94W
• Minimum Voltage Required to Conduct: 2V to 4V
• Max Storage & Operating temperature Should Be: -55 to +170 Centigrade

The Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications.

• Bi-Polar PNP Transistor
• Continuous Collector current (IC) is -1.5A
• Collector-Emitter voltage (VCE) is- 80 V
• Collector-Base voltage (VCB) is- 80V
• Base Current (Ib) is -0.5A
• Emitter Base Breakdown Voltage (VBE) is -5V
• DC current gain (hfe) is 40 to 160
• Available in To-225 and SOT-32 Package
• Collector Dissipation: 12.5 W
• Operating Junction Temperature Max (Tj): 150°C

• Package Type: TO-92
• Transistor Type: NPN
• Max Collector Current(IC): 30mA
• Max Collector-Emitter Voltage (VCE): 20V
• Max Collector-Base Voltage (VCB): 30V
• Max Emitter-Base Voltage (VBE): 5V
• Max Collector Dissipation (Pc): 300 Milliwatt
• Max Transition Frequency (fT): 120 MHz
• Minimum & Maximum DC Current Gain (hFE): 35 to 125
• Max Storage, Operating & Junction temperature range: -65 to +150 Centigrade

• HF applications in radio and television receivers
• FM tuners
• Low noise AM mixer-oscillators
• IF amplifiers in AM/FM receivers

• 2sc925 well known as C945 NPN transistor.
• Max Voltage Collector Emmiter=50 V.
• Max Collector current=150 mA.
• Collector power dissipation: 400 mW.
• Japanese High-frequency amplifier NPN Transistor.
• Current Gain (hFE) is 70 to 700 (high linearity).
• Continuous Collector current (IC) is 150mA.
• Collector-Emitter voltage (VCEO) is 50 V.
• Collector-Base voltage (VCB0) is 60V.
• Emitter Base Voltage (VBE0) is 5V.
• Transition Frequency is 150MHz.

• Type – NPN
• Collector-Emitter Voltage: 25 V
• Collector-Base Voltage: 30 V
• Emitter-Base Voltage: 7 V
• Collector Current: 0.05 A
• Collector Dissipation – 0.4 W
• DC Current Gain (hfe) – 130 to 520
• Transition Frequency – 220 MHz
• Noise Figure – 6 dB
• Operating and Storage Junction Temperature Range -55 to +150 °C
• Package – TO-92

A heat-sink is designed to remove heat from a transistor and dissipate it into the surrounding air as efficiently as possible. Heat-sinks take many different forms, such as finned aluminium or copper sheets or blocks, often painted or anodised matt black to help dissipate heat more quickly. Good physical contact between the transistor and heat-sink is essential, and a heat transmitting grease (heat-sink compound) is smeared on the contact area before clamping the transistor to the heat-sink.

BC327 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.

The main use is for audio frequency amplifier applications. It can also be used for the switching purpose just like other PNP transistors. When use as an Audio frequency general purpose amplifier, can be operated in the active region. This transistor is further divided into four groups according to the DC current gain, O, Y, G, and L and has 140, 240, 400 and 700 hfe DC current gain respectively.