IRF4905 MOSFET

99.00

IRF4905 MOSFET is a P-Channel HEXFET Power MOSFET available in a TO-220AB package and is based on Advanced Process Technology. It is mainly used for fast switching purpose, capable of providing ultra-low on-resistance. This tiny device comes with three terminals called gate, drain and source where the gate terminal is used to control the current on remaining two terminals. The area between source and drain is known as a channel that is widely dependent on the voltage applied to the gate terminal.

IRF4905 MOSFET – 55V 74A P-Channel HEXFET Power MOSFET TO-220

IRF4905 is fifth generation HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Fully avalanche rated

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity P-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 74A
Drain-Source Resistance (Rds On) 20mOhms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 180 nC
Operating Temperature Range -55 – 175C
Power Dissipation (Pd) 200W

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99.00