Transistors & Mosfet

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  • BD140 General Purpose PNP Epitaxial Silicon Transistor

    Transistors & Mosfet
    (0)
    ₨40.00 Quick View
    • Bi-Polar PNP Transistor
    • Continuous Collector current (IC) is -1.5A
    • Collector-Emitter voltage (VCE) is- 80 V
    • Collector-Base voltage (VCB) is- 80V
    • Base Current (Ib) is -0.5A
    • Emitter Base Breakdown Voltage (VBE) is -5V
    • DC current gain (hfe) is 40 to 160
    • Available in To-225 and SOT-32 Package
    • Collector Dissipation: 12.5 W
    • Operating Junction Temperature Max (Tj): 150°C

  • BF495

    Transistors & Mosfet
    (0)
    ₨29.00 Quick View
    • Package Type: TO-92
    • Transistor Type: NPN
    • Max Collector Current(IC): 30mA
    • Max Collector-Emitter Voltage (VCE): 20V
    • Max Collector-Base Voltage (VCB): 30V
    • Max Emitter-Base Voltage (VBE): 5V
    • Max Collector Dissipation (Pc): 300 Milliwatt
    • Max Transition Frequency (fT): 120 MHz
    • Minimum & Maximum DC Current Gain (hFE): 35 to 125
    • Max Storage, Operating & Junction temperature range: -65 to +150 Centigrade

  • BC109

    Transistors & Mosfet
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    ₨25.00 Quick View

    BC109 is a bipolar NPN type transistor. It has Collector-Emitter Volt (Vceo): 20V & Collector Current (Ic): 0.2A.

  • BC134

    Transistors & Mosfet
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    ₨25.00 Quick View

    BC134 is a NPN type transistor. Its Maximum Collector-Base Voltage |Vcb|: 45 V & Maximum Collector Current |Ic max|: 0.2 A.

  • BC107

    Transistors & Mosfet
    (0)
    ₨25.00 Quick View
    • Small Signal NPN Transistor
    • Current Gain (hFE): 450 (maximum)
    • Continuous Collector current (IC) is 100mA
    • Collector-Emitter voltage (VCEO) is 45V
    • Collector-Base voltage (VCB0) is 50V
    • Emitter Base Voltage (VBE0) is 6V
    • Available in To-18 Metal can Package

  • BC108

    Transistors & Mosfet
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    ₨20.00 Quick View
    • Bi-Polar NPN Transistor
    • DC Current Gain (hFE) is 900 maximum
    • Continuous Collector current (IC) is 200mA
    • Emitter Base Voltage (VBE) is 5V
    • Base Current(IB) is 10mA maximum
    • Available in TO-18 Metal Can Package
    • Maximum Collector-Base Voltage |Vcb|: 30 V’
    • Collector Dissipation: 0.3 W
    • Transition Frequency:150 MHz
    • Operating Junction Temperature Max (Tj): 175 °C
    • Noise Figure – 2 dB
    • Operating and Storage Junction Temperature Range -65 to +175 °C
    • Collector Capacitance 5pF

  • ULN2003 IC

    ICs
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    ₨40.00 Quick View
    1. Seven Darlingtons per package
    2. Output current 500 mA per driver (600 mA peak)
    3. Output voltage 50 V
    4. Integrated suppression diodes for inductive loads
    5. Outputs can be paralleled for higher current
    6. TTL/CMOS/PMOS/DTL compatible inputs
    7. Inputs pinned opposite outputs to simplify
  • -26%

    DS2501

    Transistors & Mosfet
    (0)
    Original price was: ₨190.00.Current price is: ₨140.00. Quick View

    512 bits Electrically Programmable Read Only Memory (EPROM) communicates with the economy of one signal plus ground

    . Unique, factory-lasered and tested 64-bit registration number (8-bit family code + 48-bit serial number + 8-bit CRC tester) assures absolute traceability because no two parts are alike

    . Built-in multidrop controller ensures compatibility with other MicroLAN products

    . EPROM partitioned into two 256-bit pages for randomly accessing packetized data

    . Each memory page can be permanently write-protected to prevent tampering

    . Device is an “add-only” memory where additional data can be programmed into EPROM without disturbing existing data

    . Architecture allows software to patch data by superseding an old page in favor of a newly programmed page

    . Reduces control, address, data, power, and programming signals to a single data pin

    . Directly connects to a single port pin of a microprocessor and communicates at up to 16.3 kbps

    . 8-bit family code specifies DS2501 communications requirements to reader