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- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 800 maximum
- Continuous Collector current (IC) is 500mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Available in To-92 Package
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- Package Type: TO-92
- Transistor Type: PNP
- Max Collector Current(IC): -100mA
- Max Collector-Emitter Voltage (VCE): -45V
- Max Collector-Base Voltage (VCB): -50V
- Max Emitter-Base Voltage (VBE): -5V
- Max Collector Dissipation (Pc): 500 Milliwatt
- Max Transition Frequency (fT): 100 MHz
- Minimum & Maximum DC Current Gain (hFE): 125 to 800
- Max Storage & Operating temperature Should be: -65 to +150Centigrade
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- Small Signal NPN Transistor
- Current Gain (hFE): 450 (maximum)
- Continuous Collector current (IC) is 100mA
- Collector-Emitter voltage (VCEO) is 45V
- Collector-Base voltage (VCB0) is 50V
- Emitter Base Voltage (VBE0) is 6V
- Available in To-18 Metal can Package
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- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 900 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 10mA maximum
- Available in TO-18 Metal Can Package
- Maximum Collector-Base Voltage |Vcb|: 30 V’
- Collector Dissipation: 0.3 W
- Transition Frequency:150 MHz
- Operating Junction Temperature Max (Tj): 175 °C
- Noise Figure – 2 dB
- Operating and Storage Junction Temperature Range -65 to +175 °C
- Collector Capacitance 5pF
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-20%
2SA1941 bipolar transistor p-n-p type transistor. Collector-Emitter Voltage: -140 V Collector-Base Voltage: -140 V Emitter-Base Voltage: -5 V Collector Current: -10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 ?C
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- Seven Darlingtons per package
- Output current 500 mA per driver (600 mA peak)
- Output voltage 50 V
- Integrated suppression diodes for inductive loads
- Outputs can be paralleled for higher current
- TTL/CMOS/PMOS/DTL compatible inputs
- Inputs pinned opposite outputs to simplify
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ULN 2803 is a high-voltage, high-current Darlington transistor array. The device consists of eight npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of each Darlington pair is 500 mA. The Darlington pairs may be connected in parallel for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers.
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-26%
512 bits Electrically Programmable Read Only Memory (EPROM) communicates with the economy of one signal plus ground
. Unique, factory-lasered and tested 64-bit registration number (8-bit family code + 48-bit serial number + 8-bit CRC tester) assures absolute traceability because no two parts are alike
. Built-in multidrop controller ensures compatibility with other MicroLAN products
. EPROM partitioned into two 256-bit pages for randomly accessing packetized data
. Each memory page can be permanently write-protected to prevent tampering
. Device is an “add-only” memory where additional data can be programmed into EPROM without disturbing existing data
. Architecture allows software to patch data by superseding an old page in favor of a newly programmed page
. Reduces control, address, data, power, and programming signals to a single data pin
. Directly connects to a single port pin of a microprocessor and communicates at up to 16.3 kbps
. 8-bit family code specifies DS2501 communications requirements to reader