2SC2331 Bipolar Transistor

16.00
  • Type Designator: 2SC2331
  • Material of transistor: Si
  • Polarity: NPN
  • Maximum collector power dissipation (Pc), W: 1
  • Maximum collector-base voltage |Ucb|, V: 80
  • Maximum collector-emitter voltage |Uce|, V: 60
  • Maximum emitter-base voltage |Ueb|, V: 8
  • Maximum collector current |Ic max|, A: 0.7
  • Transition frequency (ft), MHz: 30
  • Collector capacitance (Cc), pF: 8
  • Forward current transfer ratio (hFE), min: 40
  • Noise Figure, dB: –
  • Package of 2SC2331 transistor: TO92
Out of stock

Out of stock

2SC2331 2SC 2331 C2331 NPN 60V 0.7A Low Power NPN Transistors TO-92L Package Bipolar Transistor Plastic Encapsulate Silicon Epitaxial Type Transistors

2SC2331 2SC 2331 C2331 NPN 60V 0.7A Low Power NPN Transistors TO-92L Package Bipolar Transistor Plastic Encapsulate Silicon Epitaxial Type Transistors

Specification:

  • Type Designator: 2SC2331
  • Material of transistor: Si
  • Polarity: NPN
  • Maximum collector power dissipation (Pc), W: 1
  • Maximum collector-base voltage |Ucb|, V: 80
  • Maximum collector-emitter voltage |Uce|, V: 60
  • Maximum emitter-base voltage |Ueb|, V: 8
  • Maximum collector current |Ic max|, A: 0.7
  • Transition frequency (ft), MHz: 30
  • Collector capacitance (Cc), pF: 8
  • Forward current transfer ratio (hFE), min: 40
  • Noise Figure, dB: –
  • Package of 2SC2331 transistor: TO92

Package Include:

  • 1 x 2SC2331 2SC 2331 C2331 NPN 60V 0.7A Low Power NPN Transistors TO-92L Package Bipolar Transistor Plastic Encapsulate Silicon Epitaxial Type Transistors

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Out of stock