20N60 N-Channel Power Mosfet Transistor
STW20NM60FD – W20NM60FD N-CHANNEL MOSFET 20A 600V 3-PIN TO-247
Product Condition : Refurbished
Absolute Maximum Ratings
1. Drain source voltage : VDSS = 600 V
2. Drain gate voltage (RGS = 20 k) : VDGR = 600 V
3. Gate source voltage : VGSS = 30 V
4. Drain power dissipation (Tc = 25C) : PD = 192W
5. Single pulse avalanche energy : EAS = 663 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAS = 700 mJ
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