Transistors

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    2SA1941 Bipolar Transistor

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    2SA1941 Bipolar Transistor

    2SA1941 bipolar transistor p-n-p type transistor. Collector-Emitter Voltage: -140 V Collector-Base Voltage: -140 V Emitter-Base Voltage: -5 V Collector Current: -10 A Collector Dissipation – 100 W DC Current Gain (hfe) – 55 to 160 Transition Frequency – 30 MHz Operating and Storage Junction Temperature Range -55 to +150 °C

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    BC107

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    BC107

    BC107 is an NPN bipolar planner low power transistor which is mainly designed for general purpose switching and amplification purpose. Collector Emitter Voltage V(br)ceo 45V. DC Collector Current 200mA.

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    BC108

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    BC108

    BC108 is a bi-polar NPN type transistor. It is used for switching and amplification. Collector emitter voltage (Vce) of 25V. Continuous collector current (Ic) of 200mA. DC current gain of 40 at Ic=10µA

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    BC109

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    BC109

    BC109 is a bipolar NPN type transistor. It has Collector-Emitter Volt (Vceo): 20V & Collector Current (Ic): 0.2A.

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    BC134

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    BC134

    BC134 is a NPN type transistor. Its Maximum Collector-Base Voltage |Vcb|: 45 V & Maximum Collector Current |Ic max|: 0.2 A.

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    BC337

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    BC337

    This is the BC337, an NPN silicon BJT (Bipolar Junction Transistor). This little transistor can help in your project by being used to help drive large loads or amplifying or switching applications. The BC337 is specifically rated at 50V and 800mA max.

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    BC548

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    BC548

    BC548 is general purpose silicon, NPN, bipolar junction transistor. It is used for amplification and switching purposes. The current gain may vary between 110 and 800. The maximum DC current gain is 800. Its DC Current Gain (hFE) is 800 , maximum Continuous Collector current (IC) is 500mA, Emitter Base Voltage (VBE) is 5V Base & Current(IB) is 5mA maximum.

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    BC557

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    BC557

    BC557 is a PNP transistor. Its DC Current Gain (hFE) is 300 maximum. Continuous Collector current (IC) is 100mA. Emitter Base Voltage (VBE) is 6V. Base Current(IB) is 5mA maximum.

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    BD140

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    BD140

    BD140: 1.5 A, 80 V PNP Bipolar Power Transistor medium-power are designed for use as audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

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    BF494

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    BF494

    BF494 NPN Medium Frequency Transistor. It has Low current (max. 30 mA) & Low voltage (max. 20 V). It used in HF applications in radio and television receivers, FM tuners, Low noise AM mixer-oscillators & IF amplifiers in AM/FM receivers.

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    BF495

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    BF495

    BF495 NPN Medium Frequency Transistor. It has Low current (max. 30 mA) & Low voltage (max. 20 V). It used in HF applications in radio and television receivers, FM tuners, Low noise AM mixer-oscillators & IF amplifiers in AM/FM receivers.

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    ULN 2803

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    ULN 2803

    ULN 2803 is a high-voltage, high-current Darlington transistor array. The device consists of eight npn Darlington pairs that feature high-voltage outputs with common-cathode clamp diodes for switching inductive loads. The collector-current rating of each Darlington pair is 500 mA. The Darlington pairs may be connected in parallel for higher current capability. Applications include relay drivers, hammer drivers, lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers.