Transistors

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    10N60 N-Channel Mosfet Transistor

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    10N60 N-Channel Mosfet Transistor

    This type of transistor is designed for high efficiency switch mode power supply.

    55.00
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    20N60 N-Channel Power Mosfet Transistor

    -18%
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    20N60 N-Channel Power Mosfet Transistor

    20N60 belongs to the family of N-channel MOSFET. Its basically a power MOSFET that means it can handle certain levels of power. Its working principle is based on UTC technology. It provides the fast switching application and the minimum on state resistance as well. handling of high current, high speed of switching and low on sate resistance are its major features. Its real life applications include servo motor drivers, UPS, speed control of AC motor and many more.

    85.00 70.00
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    2N2219 - NPN Transistor

    -15%
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    2N2219 – NPN Transistor

    2N2219 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2219 has a gain value hfe of 50; this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA by using a transistor to the base pin. When this transistor is fully biased then it can allow a maximum of 800mA to flow across the collector and emitter. This stage is called Saturation Region. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 600 mV.

    100.00 85.00
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    2N2222A - NPN Transistor

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    2N2222A – NPN Transistor

    2N2222 is the most commonly used Negative-Positive-Negative (NPN) Bipolar Junction Transistor (BJT) available in the market now a days. 2N2222 can be used for different purposes e.g. switching and amplification of analog signals. The major functional area of 2N2222 is enclosed in TO-18 package. Due to the low cost and small size it is the most commonly used transistor. One of its key features is its ability to handle the high values of currents as compared to the other similar small transistors. Normally it is capable of switching a load current of 800mA which is really high rating as compared to other similar transistors. It is either made up of silicon or germanium material and doped with either positively or negatively charged material. Its applications may include amplification of analog signals as well as switching applications. While performing amplification applications, it receives an analog signal via collectors and another signal is applied at its base. Analog signal could be the voice signal having the analog frequency of almost 4kHz (human voice).

    10.00
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    2N2905 PNP Transistor

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    2N2905 PNP Transistor

     2N2905 is a PNP bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.

    100.00
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    2N2907 Bipolar PNP Transistor

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    2N2907 Bipolar PNP Transistor

    This is a Bipolar PNP transistor available in metal can package, having a high value of current 600mA with low voltage of 40v. The condition of being forward biased is when the base connected to the ground or having no supply on it, and as a signal is provided to base pin it goes reverse biased. The transistor is having DC current gain value of 100 to 300 which shows the amplification capacity of the transistor. As it is used for the amplification and switching. When the transistor is fully biased it allows a maximum of 500mA current through the collector and provide a voltage (collector to emitter) of 1.6v (max.), this is the Saturation region of the transistor. While the base current is removed the transistor is in off state it’s in Cut-off region.

    10.00
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    2N3904 - NPN Transistor

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    2N3904 – NPN Transistor

    2N3904 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N3904 has a gain value of 300; this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 200mA, hence we cannot connect loads that consume more than 200mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of 200mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V­CE) or Collector-Base (VCB) could be 40V and 60V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 600 mV.

    10.00
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    2N3906 PNP Transistor

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    2N3906 PNP Transistor

    2N3906 is a PNP transistor hence the collector and emitter will be closed (Forward biased) when the base pin is held at ground and will be opened (Reverse biased) when a signal is provided to base pin. 2N3906 has a gain value of 110 to 300, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 200mA, hence we cannot connect loads that consume more than 200mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA. When this transistor is fully biased then it can allow a maximum of 200mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V­CE) or Base-Emitter (VBE) could be 40 and 5 V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around 5V.

    10.00
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    2N4401 NPN Transistor

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    2N4401 NPN Transistor

     2N4401 is a NPN bipolar junction transistor which is mainly designed for general purpose, small signal and switching applications.

    5.00
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    2N5401 PNP Transistor

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    2N5401 PNP Transistor

    2N5401 is a PNP transistor designed specifically for high voltage – low power switching applications and amplifications. These types of circuits can be seen in telephone systems. It can also be used when you want a simple switching device for high voltage loads.

    10.00
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    2N5551 NPN Transistor

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    2N5551 NPN Transistor

    2N5551 is an NPN amplifier Transistor with an amplification factor (hfe) of 80 when the collector current is 10mA. The transistor is commonly used for amplification of audio or other low power signals.

    5.00
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    2N7000 – N-Channel MOSFET

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    2N7000 – N-Channel MOSFET

    2N7000 is a small signal N-channel MOSFET. MOSFET’s are power electronic switches just like transistors, but with a higher current and voltage rating. The 2N7000 MOSFET can be used to switch loads which operates on less than 60V (VDS) and 200mA (ID). This mosfet comes in a compact TO-92 package and has a threshold voltage of 3V, hence if you looking for a small mosfet to switch a load then this IC could suit your purpose.

    25.00