Optical Sensors/Photo Transistors

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    ON Semiconductor L14G3

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    ON Semiconductor L14G3

    The L14G3 is a Phototransistor with Collector Emitter Voltage (Breakdown) 45 V, Collector Emitter Voltage(Saturation) 0.40 V, On-State Collector Current 2 mA, Power Dissipation 300 to 600 mW.

    120.00
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    Photoelectric Sensor G183A10 NA

    -6%
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    Photoelectric Sensor G183A10 NA

    Photoelectric sensors are electronic devices capable of detecting the approximation, passage and presence of metallic materials or not, through emission and reception of infrared light provided they are located within the distance of actuation of the sensor. The detection of the photoelectric sensor occurs without physical contact between the sensor and the trigger because it has no moving parts subject to mechanical wear and thus increase the life of the equipment. The Photoelectric Sensor price base on the three operating principles Diffuse, Retroreflective, Barrier. Photoelectric sensor price model G18 with plastic housing has tubular shape with 18mm diameter (M18) with cable type or connector depending on type (diffuse, reflective or barrier) has sensing distances of 10, 30 cm, 2 and 5 m. Photoelectric sensor price has electrical configuration type NPN or PNP contacts normally open (NA), normally closed (NF) or (NA + NF) and connection with 2 or 4 pins.

    1,100.00 1,030.00